MIT Terahertz Integrated Electronics Group

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Pradyot Yadav

Pradyot Yadav

PhD student

  • 3D heterogeneous integration
  • sub-THz & mmWave circuits
  • advanced packaging

yadavps@mit.edu

Bio

Pradyot Yadav (Graduate Student Member, IEEE) is a 4th-year Ph.D. candidate at MIT, co-advised by Prof. Tomás Palacios and Prof. Ruonan Han. He received his B.S. in Electrical Engineering with highest honors from the Georgia Institute of Technology in 2022, where he worked with Prof. Hua Wang and Prof. James Kenney on GaN power amplifier design, and his S.M. in Electrical Engineering from MIT in 2024. His current research interests are the development of devices, circuits, and packages for RF 3D heterogeneously integrated chips — advancing mmWave and sub-THz systems through the integration of GaN, Si CMOS, glass, and diamond substrates, novel sub-THz GaN transistors, and advanced packaging using DTCO/STCO. From 2020 to 2021, he was a Microwave Module Intern and R&D Intern at Qorvo Inc., Richardson, TX. From 2024 to 2025, he was a Quantum Research Scientist Intern at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY. He is currently an Advanced Technology Intern at Raytheon, Tewksbury, MA, alongside his role as a Graduate Research Assistant at MIT. Mr. Yadav received First Place in the High-Efficiency Power Amplifier (HEPA) Student Design Competition for his 3-GHz GaN Doherty amplifier design at the IEEE MTT-S International Microwave Symposium (IMS) 2019. He received the Best Student Award in Electronic Devices at the 15th International Conference on Nitride Semiconductors (ICNS-15), the IEEE MTT-S 2023 Graduate Research Fellowship, and the SRC JUMP 2.0 CHIMES Annual Review Best Poster Award in 2023, 2024, and 2025. He was also an IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2025 Best Student Paper Finalist. He is a Department of War National Defense Science and Engineering Graduate (DoW NDSEG) Fellow and a Barry Goldwater Scholar. He serves as a reviewer for IEEE Electron Device Letters and IEEE Microwave and Wireless Technology Letters.

Publications 4

Other publications 8

Co-authored before joining the group, or independent collaborations not involving the Han group.

  • TMTT Jan 2026

    Integrated Circuit-on-Glass (ICoG): A Self-Packaged 3D-Heterogeneous Integration (3DHI) Platform for Millimeter-Wave Circuits With Embedded GaN-on-Si Dielets

    P. Yadav, X. Li, T. Palacios, M. Swaminathan

    BibTeX 
    @article{yadav2026icog,
  author    = {P. Yadav and X. Li and T. Palacios and M. Swaminathan},
  title     = {Integrated Circuit-on-Glass (ICoG): A Self-Packaged 3D-Heterogeneous Integration (3DHI) Platform for Millimeter-Wave Circuits With Embedded GaN-on-Si Dielets},
  journal   = {IEEE Transactions on Microwave Theory and Techniques},
  year      = {2026},
  month     = {jan},
  venue     = {TMTT},
}

  • IMS Jun 2025

    First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer

    P. Yadav, X. Li, J. Niroula, P. Darmawi-Iskandar, U. L. Rohde, T. Palacios, M. Swaminathan

    BibTeX 
    @inproceedings{yadav2025ims_glass,
  author    = {P. Yadav and X. Li and J. Niroula and P. Darmawi-Iskandar and U. L. Rohde and T. Palacios and M. Swaminathan},
  title     = {First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer},
  booktitle = {IEEE MTT-S International Microwave Symposium (IMS)},
  year      = {2025},
  month     = {jun},
  venue     = {IMS},
}

  • RFIC Jun 2025

    Heterogeneously-Integrated Amplifier-on-Glass with Embedded Gallium Nitride (GaN) Dielet for mmWave Applications

    X. Li, P. Yadav, T. Palacios, M. Swaminathan

    X. Li and P. Yadav contributed equally.

    BibTeX 
    @inproceedings{li_yadav_2025rfic_glass,
  author    = {X. Li and P. Yadav and T. Palacios and M. Swaminathan},
  title     = {Heterogeneously-Integrated Amplifier-on-Glass with Embedded Gallium Nitride (GaN) Dielet for mmWave Applications},
  booktitle = {IEEE Radio-Frequency Integrated Circuit Symposium (RFIC)},
  year      = {2025},
  month     = {jun},
  venue     = {RFIC},
  note      = {X. Li and P. Yadav contributed equally.},
}

  • DRC Jun 2024

    Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500 °C

    J. Niroula, M. A. Taylor, Q. Xie, P. Yadav, S. Luo, Y. Zhao, T. Palacios

    BibTeX 
    @inproceedings{niroula2024drc_hightemp,
  author    = {J. Niroula and M. A. Taylor and Q. Xie and P. Yadav and S. Luo and Y. Zhao and T. Palacios},
  title     = {Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500 °C},
  booktitle = {IEEE Device Research Conference (DRC)},
  year      = {2024},
  month     = {jun},
  venue     = {DRC},
}

  • APL May 2024

    High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

    J. Niroula, Q. Xie, N. S. Rajput, P. K. Darmawi-Iskandar, S. I. Rahman, S. Luo, R. H. Palash, B. Sikder, M. Yuan, P. Yadav, G. K. Micale, N. Chowdhury, Y. Zhao, S. Rajan, T. Palacios

    BibTeX 
    @article{niroula2024apl_ohmic,
  author    = {J. Niroula and Q. Xie and N. S. Rajput and P. K. Darmawi-Iskandar and S. I. Rahman and S. Luo and R. H. Palash and B. Sikder and M. Yuan and P. Yadav and G. K. Micale and N. Chowdhury and Y. Zhao and S. Rajan and T. Palacios},
  title     = {High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C},
  journal   = {Applied Physics Letters},
  year      = {2024},
  month     = {may},
  volume    = {124},
  number    = {20},
  venue     = {APL},
}

  • DRC Jun 2023

    First Demonstration of GaN RF HEMTs on Engineered Substrate

    P. Yadav, Q. Xie, J. Niroula, G. K. Micale, H. Pal, T. Palacios

    BibTeX 
    @inproceedings{yadav2023drc_gan_hemt,
  author    = {P. Yadav and Q. Xie and J. Niroula and G. K. Micale and H. Pal and T. Palacios},
  title     = {First Demonstration of GaN RF HEMTs on Engineered Substrate},
  booktitle = {IEEE Device Research Conference (DRC)},
  year      = {2023},
  month     = {jun},
  venue     = {DRC},
}

  • VLSI Jun 2023

    Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C

    Q. Xie, M. Yuan, J. Niroula, B. Sikder, S. Luo, K. Fu, N. S. Rajput, A. B. Pranta, P. Yadav, Y. Zhao, N. Chowdhury, T. Palacios

    BibTeX 
    @inproceedings{xie2023vlsi_dtco,
  author    = {Q. Xie and M. Yuan and J. Niroula and B. Sikder and S. Luo and K. Fu and N. S. Rajput and A. B. Pranta and P. Yadav and Y. Zhao and N. Chowdhury and T. Palacios},
  title     = {Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C},
  booktitle = {IEEE Symposium on VLSI Technology and Circuits},
  year      = {2023},
  month     = {jun},
  venue     = {VLSI},
}

  • MWMag Feb 2020

    Optimizing the Doherty Amplifier: Design of a 3-GHz GaN Doherty Amplifier Achieving 60

    P. Yadav

    1st Place, IMS 2019 PA Student Design Competition

    BibTeX 
    @article{yadav2020mwmag_doherty,
  author    = {P. Yadav},
  title     = {Optimizing the Doherty Amplifier: Design of a 3-GHz GaN Doherty Amplifier Achieving 60% Efficiency},
  journal   = {IEEE Microwave Magazine},
  year      = {2020},
  month     = {feb},
  venue     = {MWMag},
  note      = {1st Place, IMS 2019 PA Student Design Competition},
}