Bio
Ruonan received his B.S. degree in microelectronics from Fudan University, China, in 2007, M.S. degree in electrical engineering from University of Florida in 2009, and Ph.D. in electrical and computer engineering from Cornell University in 2014. He joined MIT in July 2014, and has been on the faculty of the Department of Electrical Engineering and Computer Science (Assistant Professor 2014~2018, Associate Professor 2018~2025, Professor 2025~). His research group aims to explore microelectronic circuits and systems to bridge the terahertz gap between microwave and infrared domains. He has served on the committees of a few conferences, including the technical-program committee (TPC) of IEEE International Solid-State Circuits Conference (ISSCC) (2022~present), IEEE Radio-Frequency Integrated Circuits (RFIC) Symposium (2017~present), and 2019 International Microwave Symposium (IMS) Steering Committee. He was the associate editor of the IEEE Transactions on Quantum Engineering (2020~present) and IEEE Transactions on Very-Large-Scale Integration (VLSI) Systems (2018~2021), and the Guest Editor of the IEEE Transactions on Microwave Theory and Techniques (T-MTT) (2019). He is the 2020~2022 Distinguished Microwave Lecturer of IEEE Microwave Theory Techniques Society (MTT-S) and 2025~2026 Distinguished Lecturer of IEEE Solid-State Circuits Society (SSCS). Ruonan was the recipient of three Best Student Paper Awards from IEEE RFIC Symposia (2012, 2017 and 2021), NSF Faculty Early CAREER Development Award (2017), Intel Outstanding Researcher Award (2019) and the IEEE Solid-State Circuit Society New Frontier Award (2023). In 2023, he was appointed as the Associate Director of MIT Microsystems Technology Laboratories (MTL) and Director of MIT-MTL Center of Integrated Circuits and Systems (CICS).
Publications 124
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4W Heterogeneous Power Amplifier with GaN-on-Si Dielets in Single-Crystal Diamond Interposer for 6G FR3 Applications
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Sub-Millimeter GaN-on-Si Dielet Fabrication in Advanced Packaging Substrates Using Femtosecond Laser for 3D Heterogeneous Integration Applications
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A 55.8-to-64.2GHz, 58.3fsrms-Jitter, -250.2dB-FoMJ Fractional-N Cascaded PLL in 28nm CMOS
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3-D-Millimeter Wave Integrated Circuits (3D-mmWIC) Using GaN-on-Si Dielets With Si CMOS for 5G FR2 Power Amplifiers
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A 234-to-252GHz Dual-Polarized Transceiver Using Antenna-in-Package Technologies for Cross-Polarimetric Sensing
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Self-Programmable Twin PUFs via Photovoltaic Energy Harvesting During the Pre-Wafer-Dicing Stage
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A Cryo-CMOS Color-Center Quantum Controller with Diamond Waveguide Micro-Chiplet Integration
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A Fully Integrated 263-GHz Retro-Backscatter Circuit with 105° Reading Angle and 12-dB Conversion Loss
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A 55.8-to-64.2GHz, 58.3fsrms-Jitter, -250.2dB-FoMJ Fractional-N Cascaded PLL in 28nm CMOS
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3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si Dielets with Intel 16 Si CMOS
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A Bidirectional Wireless THz Datalink Designed to Maximize the Information-per-Heat Transfer to A Cryogenic Device
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CIRCUIT: A Benchmark for Circuit Interpretation and Reasoning Capabilities of LLMs
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A 232-260GHz CMOS Amplifier-Multiplier Chain with a Low-Cost, Matching-Sheet-Assisted Radiation Package and 11.1dBm Total Radiated Power
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A 265-GHz CMOS Reflectarray with 98×98 Elements for 1°-Wide Beam Forming and High-Angular-Resolution Radar
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Heterogeneous integration of spin–photon interfaces with a CMOS platform
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The Pursuit of Practical Applications of THz CMOS Chips
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A CMOS-Integrated Color Center Pulse-Sequence Control and Detection System
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A Packageless Anti-Tampering Tag Utilizing Unclonable Sub-THz Wave Scattering at the Chip-Item Interface
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A Dual Composite Resin Injection Molding Technique with 3D-Printed Flexible Indices for Biomimetic Replacement of A Missing Mandibular Lateral Incisor
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A 1.54 mm², 264-GHz Wake-Up Receiver with Integrated Cryptographic Authentication for Ultra-Miniaturized Platforms
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Zero-Change CMOS Nanophotonics: Converting Foundry Semiconductor Chips to Plasmonic Electro-optic Modulators
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Perspective on Active Submillimeter Electromagnetic Wave Imaging Using CMOS Integrated Circuits Technologies
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A 1.54mm² Wake-Up Receiver Based on THz Carrier Wave and Integrated Cryptographic Authentication
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THz Cryo-CMOS Backscatter Transceiver: A Contactless 4 Kelvin-300 Kelvin Data Interface
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CMOS Integrated Circuits for the Quantum Information Sciences
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A 140-GHz FMCW TX/RX-Antenna-Sharing Transceiver with Low-Inherent-Loss Duplexing and Adaptive Self-Interference Cancellation
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A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier with A Slotline-Based Power Combiner
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Physical-Layer Security for THz Communications via Orbital Angular Momentum Waves
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Integrable Timing on Silicon Wafer Supporting CubeSats-Based Communications, Navigation and Radio Science
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A Dual-Antenna, 263GHz Energy Harvester in CMOS for Ultra-Miniaturized Platforms with 13.6
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A Sub-THz CMOS Molecular Clock with 20 ppt Stability at 10,000 s Based on A Dual-Loop Spectroscopic Detection and Digital Frequency Error Integration
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Low-Loss On-Chip Passive Circuits Using C4 Layer for RF, mmWave and sub-THz Applications
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A 0.31-THz Orbital-Angular-Momentum (OAM) Wave Transceiver in CMOS With Bits-to-OAM Mode Mapping
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Scalable Quantum Information Processing Architecture Using A Programmable Array of Spin-Photon Interfaces
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A 140GHz Transceiver with Integrated Antenna, Inherent-Low-Loss Duplexing and Adaptive Self-Interference Cancellation for FMCW Monostatic Radar
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A High-Efficiency 142-182 GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique
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A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier with Slotline-Based Power Combining Technique Achieving ¿22dBm Saturated Output Power and ¿10
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Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98×98 Unit, 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction
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Emerging Terahertz Integrated Systems in Silicon
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Sub-Terahertz Heterodyne Spectroscopy of Carbonyl Sulfide
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Realization of In-Band Full-Duplex Operation at 300 K and 4.2 K Using Bilateral Single-Sideband Frequency Conversion
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Integrated Circuit-to-Waveguide Slot-Array Coupler
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Systems and Methods for Suppressing Even Harmonics in a Molecular Clock
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High-Scalability CMOS Quantum Magnetometer with Spin-State Excitation and Detection of Diamond Color Centers
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A 105Gbps Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-330GHz Signal and Integrated Waveguide Coupler
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CMOS THz-ID: A 1.6-mm² Package-Less Identification Tag Using Asymmetric Cryptography and 260-GHz Far-Field Backscatter Communication
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A Terahertz Molecular Clock on CMOS Using High-Harmonic-Order Interrogation of Rotational Transition for Medium/Long-Term Stability Enhancement
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A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture
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A 0.31THz CMOS Uniform Circular Antenna Array Enabling Generation/Detection of Waves with Orbital Angular Momentum
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Organic Package Substrates Using Lithographic Via Technology for RF to THz Applications
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mmWave and Sub-THz Technology Development in Intel 22nm Low-Power FinFET Process
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220-to-330-GHz Manifold Triplexer With Wide Stopband Utilizing Ridged Substrate Integrated Waveguides
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A 3.4–4.6GHz In-Band Full-Duplex Front-End in CMOS Using a Bi-Directional Frequency Converter
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Device for Terahertz Signal Generation and Transmitter
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Fully Integrated Broadband Interconnect
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THzID: A 1.6mm² Package-Less Cryptographic Identification Tag with Backscattering and Beam-Steering at 260GHz
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Sub-THz CMOS Molecular Clock with 43ppt Long-Term Stability Using High-Order Rotational Transition Probing and Slot Array Couplers
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A Terahertz FMCW Comb Radar in 65nm CMOS with 100GHz Bandwidth
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Innovations in Terahertz Interconnects: High-Speed Data Transport Over Fully-Electrical Terahertz Waveguide Links
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A Molecular Clock Architecture for Deep Space Inter-SmallSat Radio Occultation
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Beyond Crypto: Physical-Layer Security for Internet of Things Devices
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Opening Terahertz for Everyday Applications
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Molecular Clock
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Chip-Scale Terahertz Carbonyl Sulfide (OCS) Clock: An Overview and Recent Studies on Long-Term Frequency Stability of OCS Transitions
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Filling the Gap With Sand: When CMOS Reaches THz
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A CMOS-Integrated Quantum Sensor Based on Nitrogen-Vacancy Centres
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Quantum Sensing in CMOS under Ambient Conditions: On-Chip Detection of Electronic Spin States in Diamond
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A 32-Unit 240-GHz Heterodyne Receiver Array in 65-nm CMOS with Array-Wide Phase Locking
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High-Precision Probing of Molecules Using THz CMOS Chips: Principles and Applications in High-Accessibility Sensors and Clocks
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Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet
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Principles and Prototypes of Chip-Scale Molecular Clock
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CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor
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A Scalable Quantum Magnetometer in 65nm CMOS with Vector-Field Detection Capability
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On-Chip Detection of Spin States in Color Centers for Metrology and Information Processing
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CMOS-Based THz Spectrometers: From Gas Sensing to Time-Keeping
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Chip-Scale Molecular Clock
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Wave-Matter Interactions at the Chip Scale: Devices, Systems and Opportunities
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An On-Chip Fully-Electronic Molecular Clock Based on Sub-Terahertz Rotational Spectroscopy
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Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry
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Heterodyne Sensing CMOS Array with High Density and Large Scale: A 240-GHz, 32-Unit Receiver Using A De-Centralized Architecture
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A CMOS Molecular Clock Probing 231.061-GHz Rotational Line of OCS with Sub-ppb Long-Term Stability and 66-mW DC Power
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Molecular Detection for Unconcentrated Gas With ppm Sensitivity Using 220-to-320-GHz Dual-Frequency-Comb Spectrometer in CMOS
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High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using A Multi-Functional Radiating Mesh Structure
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CMOS Terahertz Receivers
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Metamaterial Absorber for THz Polarimetric Sensing
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Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity
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Large-Scale Terahertz Active Arrays in Silicon Using Highly-Versatile Electromagnetic Structures
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Energy-Efficient Integrated THz Electronics Using Multi-Functional Electromagnetism and High-Parallelism Spectral Sensing
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A Fully Integrated Broadband Sub-mmWave Chip-to-Chip Interconnect
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Fully-Scalable 2D THz Radiating Array: A 42-Element Source in 130-nm SiGe with 80-μW Total Radiated Power at 1.01 THz
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Rapid and Energy-Efficient Molecular Sensing Using Dual THz Combs in 65nm CMOS: A 220-to-320GHz Spectrometer with 5.2mW Radiated Power and 14.6–19.5dB Noise Figure
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Devices in CMOS for Terahertz Circuits and Systems
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Devices and Circuits in CMOS for THz Applications
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On-Chip Terahertz Electronics: From Device-Electromagnetic Integration to Energy-Efficient, Large-Scale Microsystems
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A Fully-integrated 320-GHz Coherent Imaging Transceiver in 130-nm SiGe BiCMOS
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System and Method for Signal Generation
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Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging
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A 320GHz Subharmonic Mixing Coherent Imager in 130nm SiGe BiCMOS
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THz Imaging Circuits in CMOS
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A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop
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Filling the Terahertz Gap with Sand: High-Power Terahertz Radiators in Silicon
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A 320GHz Phase-Locked Transmitter with 3.3mW Radiated Power and 22.5dBm EIRP for Heterodyne THz Imaging Systems
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A CMOS High-Power Broadband 260-GHz Radiator Array For Spectroscopy
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Progress Towards mW-Power Generation in CMOS THz Signal Sources
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CMOS Sources and Detectors for Sub-Millimeter Wave Applications
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Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel
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820-GHz Imaging Array Using Diode-Connected NMOS Transistors in 130-nm CMOS
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A High-Power Broadband Passive Terahertz Frequency Doubler in CMOS
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A 260GHz Broadband Source with 1.1mW Continuous-Wave Radiated Power and EIRP of 15.7dBm in 65nm CMOS
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Schottky Diodes in CMOS for Terahertz Circuits and Systems
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Terahertz Image Sensing using CMOS Schottky Barrier Diodes
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A Broadband 480-GHz Passive Frequency Doubler in 65-nm Bulk CMOS
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Broadband Root Mean Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages
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280GHz and 860GHz Image Sensors Using Schottky-Barrier Diodes in 0.13m Digital CMOS
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A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS
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Phase Matching Using Bandgap Structures for Efficient Parametric Frequency Conversion
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280-GHz Schottky Diode Detector in 130-nm Digital CMOS
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Progress and Challenges Towards Terahertz CMOS Integrated Circuits
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Multi-level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier with Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission
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Diodes in CMOS for Millimeter-Wave and Submillimeter-Wave Circuits
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Paths to Terahertz CMOS Integrated Circuits
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Towards Terahertz Operations of CMOS
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Millimeter-Wave to Terahertz in CMOS
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A Delay Model for SRAM-based FPGA Interconnects